#ifndef __NAND_DEVICE_LIST_H__
#define __NAND_DEVICE_LIST_H__

/* #define NAND_ABTC_ATAG */
/* #define ATAG_FLASH_NUMBER_INFO       0x54430006 */
/* #define ATAG_FLASH_INFO       0x54430007 */

struct tag_nand_number {
	u32 number;
};

#define MAX_FLASH 20		/* modify this define if device list is more than 20 later .xiaolei */

#define NAND_MAX_ID		6
#define CHIP_CNT		10
#define P_SIZE		16384
#define P_PER_BLK		256
#define C_SIZE		8192
#define RAMDOM_READ		(1<<0)
#define CACHE_READ		(1<<1)
#define RAND_TYPE_SAMSUNG 0
#define RAND_TYPE_TOSHIBA 1
#define RAND_TYPE_NONE 2

#define READ_RETRY_MAX 10
struct gFeature {
	u32 address;
	u32 feature;
};

enum readRetryType {
	RTYPE_MICRON,
	RTYPE_SANDISK,
	RTYPE_SANDISK_19NM,
	RTYPE_TOSHIBA,
	RTYPE_HYNIX,
	RTYPE_HYNIX_16NM
};

struct gFeatureSet {
	u8 sfeatureCmd;
	u8 gfeatureCmd;
	u8 readRetryPreCmd;
	u8 readRetryCnt;
	u32 readRetryAddress;
	u32 readRetryDefault;
	u32 readRetryStart;
	enum readRetryType rtype;
	struct gFeature Interface;
	struct gFeature Async_timing;
};

struct gRandConfig {
	u8 type;
	u32 seed[6];
};

enum pptbl {
	MICRON_8K,
	HYNIX_8K,
	SANDISK_16K,
};

struct MLC_feature_set {
	enum pptbl ptbl_idx;
	struct gFeatureSet FeatureSet;
	struct gRandConfig randConfig;
};

enum flashdev_vendor {
	VEND_SAMSUNG,
	VEND_MICRON,
	VEND_TOSHIBA,
	VEND_HYNIX,
	VEND_SANDISK,
	VEND_BIWIN,
	VEND_NONE,
};

enum flashdev_IOWidth {
	IO_8BIT = 8,
	IO_16BIT = 16,
	IO_TOGGLEDDR = 9,
	IO_TOGGLESDR = 10,
	IO_ONFI = 12,
};

typedef struct {
	u8 id[NAND_MAX_ID];
	u8 id_length;
	u8 addr_cycle;
	u32 iowidth;
	u16 totalsize;
	u16 blocksize;
	u16 pagesize;
	u16 sparesize;
	u32 timmingsetting;
	u32 s_acccon;
	u32 s_acccon1;
	u32 freq;
	u16 vendor;
	u16 sectorsize;
	u8 devciename[30];
	u32 advancedmode;
	struct MLC_feature_set feature_set;
} flashdev_info_t, *pflashdev_info;

#endif